august 23, 1996 rf & microwave transistors uhf base station applications . 470 mhz . 24 volts . efficiency 50% min. . p out = 15w with11.0dbmin.gain . class ab . common emitter p re liminary data description the SD1391 is a gold metallized npn planar tran- sistor using diffused emitter ballast resistors for reliability and ruggedness. the SD1391 is specifically designed as a low power, high gain driver and can be operated in class a, b or c. pin connection absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 48 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 3.5 v i c collector current 2.5 a p diss power dissipation (+25 c) 29 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 6.0 c/w SD1391 1. collector 3. emitter 2. base thermal data .2 30 x .3 60 6lf l (m1 4 2) order code SD1391 branding SD1391 1/5
static dynamic electrical specifications (t case = 25 c) symbol test conditions va lu e unit min. t yp . ma x. p out f = 470 mhz p in =6.3w v cc = 24v i cq =50ma 15eew h c f = 470 mhz p in =6.3w v cc = 24v i cq =50ma 50 60 % r tl f = 470 mhz p in =6.3w v cc = 24v i cq =50ma 10 e db c ob f = 1 mhz v cb = 24 v ee24pf symbol test conditions va lu e unit min. typ . ma x. bv cbo i c = 50 ma i e = 0ma 48 e e v bv ceo i c = 20 ma i b = 0ma 25 e e v bv ebo i e = 5ma i c = 0ma 3.5 e e v i cbo v cb = 24 v i e = 0ma e e 1.0 ma h fe v ce = 10 v i c = 0.1 a 10 e 100 e SD1391 2/5
input return los s vs frequency efficiency vs frequency powe r gain vs frequency output pow er vs input powe r SD1391 3/5
typ ical c ollec tor load imp e dance typ ical inp ut imp e danc e z in z cl c1 : 2200pf chip capacitor c2 : 22pf chip capacitor + 2-10pf trim capacitor c3 : 2 x 33pf + 2-22pf trim capacitor c5 : 8.2pf + 2-10pf trim capacitor c6 : 330pf chip capac itor c7,c8 :1nf + 10nf + 100nf + 10mf l1 : 50 ohms microstrip line, l = 6mm l2 : 50 ohms microstrip line, l = 19mm l3 : 50 ohms microstrip line, l = 25mm l4 : 50 ohms microstrip line, l = 14mm l5 : 50 ohms microstrip line, l = 20mm l6 : 50 ohms microstrip line, l = 7.5mm l7 : 50 ohms microstrip line, l = 8.5mm l8,l9 : 5 turns, id = 33mm, 0.5mm wire diameter board material: teflon h = 30mils, er = 2.55 impedance data freq. z in ( w )z cl ( w ) 420 mhz 4.0 + j 2.2 7.2 + j 1.0 450 mhz 5.4 + j 3.9 6.8 + j 3.0 470 mhz 4.9 + j 5.7 6.6 + j 4.3 test circuit SD1391 4/5
ref.: dwg. no. 12-0142 rev. c udcs no. 1010968 package mechanical data information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1996 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. SD1391 5/5
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